This is manufactured by onsemi. The manufacturer part number is 2N4919G. The maximum collector current includes 1 a.
It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v ...This is manufactured by onsemi.
The manufacturer part number is 2N4919G. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.29.0095.
The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has -65°c ~ 150°c (tj) operating temperature range.
Moreover, the product comes in to-225aa, to-126-3. Furthermore, 30 @ 500ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 3mhz.
The 600mv @ 100ma, 1a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type.
Its typical moisture sensitivity level is not applicable. In addition, 500μa is the maximum current at collector cutoff. The product is available in through hole configuration.
to-126 is the supplier device package value. The maximum power of the product is 30 w. Moreover, it corresponds to 2n4919, a base product number of the product.
The product is designated with the ear99 code number.